Boffins at the University of Kiel (CAU) and the Ruhr University Bochum (RUB) have developed a new method of storing data using ions and electrons. This means that memory cells could thus be reduced down to atomic dimensions.
But according to the Scientific Reports journal the development of ever-smaller and more energy efficient memory is at its limits. Industrial companies and research institutions want a more efficient universal memory which combines the advantages of all the storage but can move data about at the same time.
To do this researchers want to get away from the charge-based storage to one which uses electrical resistance.
Professor Hermann Kohlstedt’s team came up with two metallic electrodes which are separated by a solid-state ion conductor made from a transition metal.
When a voltage is applied, the resistance of the memory cell changes. There is a shift of ions between the layers.
The cells reduce almost the size of atoms if you apply ied voltage exactly.
The new resistance-based storage is so efficient it could even simulate the brain structures. A fast pattern recognition, low power consumption associated with an enormous parallel processing of the data would allow revolutionary computer architectures.