Samsung starts churning out 3D vertical NAND

Samsung is about to start producing 3D vertical NAND (V-NAND) flash chips, allowing for higher densities and more performance in a small package. 

The layers can be stacked vertically and Samsung says it can cram up to 24 layers onto a single chip.

Samsung used a special etching technology that connects the layers electronically by punching holes from the highest layer to the bottom. With the new vertical structure, Samsung can enable higher density NAND flash memory products by increasing the 3D cell layers without having to continue planar scaling, which has become incredibly difficult to achieve, the company said. 

The chips are not only smaller and denser, they are said to be two to 10 times more reliable than conventional 10nm-class floating gate flash memory.

V-NAND also offers a twofold performance gain over 10nm-class NAND and twice the scaling of 20nm-class planar NAND. 

“Following the world’s first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry,” said Jeong-Hyuk Choi, senior vice president, flash products and technology, Samsung Electronics.

With heaps of Galaxy smartphones, tablets and SSDs rolling off production lines, Samsung will have no trouble putting the technology to good use.