Samsung reckons its 1Gb model can transmit data at 12.8 GB per second, compared to the bandwidth of mobile DDR DRAM which it quotes as 1.6GB/s. That’s eightfold, Samsung boasts. It says power consumption has been reduced by approximately 87 percent, while the bandwidth is also four times that of LPDDR2 DRAM, which sits at about 3.2GB/s.
It uses 512 pins for data input and output, up from the previous generation of mobile DRAMs which Samsung says uses a maximum of 32 pins – if you include the pinds that regulate power supply and send commands, one Samsung I/O DRAM can accommodate about 1,200 pins.
The Korean powerhouse wants to provide 20nm-class 4Gb wide I/O mobile DRAM as soon as 2013.
One of Samsung’s many vice presidents, Byungse So, said in a statement that the announcement adds nicely to its portfolio. “Following the development of 4Gb LPDDR2 DRAM last year, our new mobile DRAM with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products.”