Samsung intros 1Gb mobile DRAM with wide I/O

Samsung has announced its 1 gigabit mobile DRAM with a wide I/O interface. It uses 50nm process technology and you can expect it inside smartphones and tablets soon ish.

Samsung reckons its 1Gb model can transmit data at 12.8 GB per second, compared to the bandwidth of mobile DDR DRAM which it quotes as 1.6GB/s. That’s eightfold, Samsung boasts. It says power consumption has been reduced by approximately 87 percent, while the bandwidth is also four times that of LPDDR2 DRAM, which sits at about 3.2GB/s.

It uses 512 pins for data input and output, up from the previous generation of mobile DRAMs which Samsung says uses a maximum of 32 pins – if you include the pinds that regulate power supply and send commands, one Samsung I/O DRAM can accommodate about 1,200 pins.

The Korean powerhouse wants to provide 20nm-class 4Gb wide I/O mobile DRAM as soon as 2013. 

One of Samsung’s many vice presidents, Byungse So, said in a statement that the announcement adds nicely to its portfolio. “Following the development of 4Gb LPDDR2 DRAM last year, our new mobile DRAM with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products.”