Samsung, GloFo go for 28 nanometre HKMG process

Korean giant Samsung and foundry GlobalFoundries said they are synchonising efforts at four fabs worldwide to offer 28 nanometre (High-K Metal Gate) HKMG technology.

The companies said the technology – dubbed 28nm-LPH, is specifically targeted at mobile devices and both companies claim it will offer 60 percent active power reduction at the same frequency or 55 percent performance gain using the same leakge over low power system on a chip designs.

The synchronisation will take place at GLoFo’s Fab 1 in Dresden and its Fab 8 in New York state; as well as at Samsung’s S1 in Giheung and its expanded fab S2 in Austin, Texas.

The companies first announced their intent to cooperate last year, but now it appears the low power tech is tested and design enabled with standard cell libraries, memory compilers and complex IP blocks.

The companies describe the collaboration as a virtual fab and both Samsung and GlobalFoundries claim a global footprint largest in the world for leading edge capacity.

GlobalFoundries chief competitor is Taiwanese foundry TSMC, and the move can be seen as an attempt to head off competition from the giant.

Jay Min, VP of LSI foundry marketing at Samsung Electronics said that the 28nm tech will be first semi tech to eliminate borders between desktops and mobile devices.