Samsung develops low-energy 30nm DDR3

Samsung is boasting about its energy efficient DDR3 memory modules using a three dimensional, stacked version of its 30 nanometre process technology.

The South Korean company has been talking up its 30nm process for a while now, and reckons it can do a bang up job in the server market.

Using three dimensional through silicon via (TSV) technology the registered dual inline memory modules (RDIMMs) are targeted at a new generation of high speed and high capacity servers. 

With the DRAM market moving away from the desktop to servers, while cloud computing becomes more prevalent, Samsung is looking to more efficient server memory to keep ahead of the curve.

It reckons that using its more efficient memory could save in the region of 50 percent in overhead costs for datacentres.

As can be expected with a jump to a smaller manufacturing process the 30nm modules are leaner and meaner than the 40nm predecessors, consuming 4.5 watts per hour. 

Furthermore the TSV technology is said to offer 30 percent energy saving reductions over other regular 30nm memory modules. By stacking the chips on top of each other it is possible to make them function to shorten signal lines. This means lower power consumption when transmitting at speeds of up to 1,333 Mbps.

Engineering samples of the memory modules have now been released by Samsung for evaluation.  No price is available yet.

Samsung also mentioned that it had been looking towards making upgrading to the 3D TSV server modules easier.  The firm also has an eye on getting ready to implement a forthcoming wave of 20nm DDR3.