Samsung announces production of 3-bit-cell, 64 gigabit NAND flash

Samsung has announced what it says is the industry’s first production of a 3-bit-cell (3bit), 64 gigabit NAND flash, which uses 20 nanometer (nm)-class process technology.

It follows Samsung’s 20nm-class 32Gb MLC NAND, which it launched in April. The new chips will be used in high-density flash devices such as USB flash drives, memory cards and mobile phones – and kickstart the use of  Toggle DDR-based high-performance flash technology.

ToggleDDR NAND supports speeds of up to 133 Mbps, which is more than three times faster than the data transfer rate offered by the existing SDR NAND (40 Mbps).

The technology also supports both 1.8V and 3.3V for IO voltage while SDR NAND supports only 3.3V for IO voltage. The reduced IO voltage will help low power consumption.

Samsung proposes that the chip will replace the previous four gigabyte (32Gb) devices. The 20nm-class, 64Gb 3-bit NAND has a 60 percent higher productivity level than 30nm-class, 32Gb 3-bit NAND. It also offers improved performance by applying Toggle DDR (Double Data Rate) 1.0 specifications, compared to those of Single Data Rate based 30nm-class NAND chips.