Rice creates new memory technology

Rice University memoryScientists at Rice University have made solid state memory that, they say, gives high density and largely error free memory.

The memories are built using tantalum oxide and by applying voltage to a 250 nanometre thin set of layers of graphene, tantalum, nanoporous tantalum oxide and platinum have addressable bits where the layers meet.

Voltages that move oxygen ions and vacancies with between one and zero.

The scientists think that the discovery could lead to memories storing up to 162 gigabits and only need two electrodes a circuit, so that’s simpler than current flash memories that need three.

And nonvolatile memory like these mean data can be held without power. The memories will need 100 times less energy than current devices and will be suitable for 3D memory stacks.

Scientist James Tour said: “This tantalum memory is based on two terminal systems, so it’s all set for 3D memory stacks and doesn’t even need diodes or selectors, making it one of the easiest ultradense memories to construct. This will be a real competitor for the growing memory demands in high definition video storage and servers.”

The schematic, pictured, sows the layered structure of tantalum oxide, multilayer graphene and platinum. The memory device overcomes crosstalk problems that cause read errors in other devices.