Rfaxis releases its new 28nm RF circuit

Fabless semiconductor company Rfaxis has released designs for its new silicon multi-band/multi-mode RF Front-end Integrated Circuit.

The outfit said that the design will be the next generation mobile chip,

Dubbed Nano-RFeIC the chip is process geometry agnostic, and can therefore be built using 32nm, 40/45nm, 55/65nm and other commercially viable submicron CMOS nodes.

Hal Hikita, COO of Rfaxis, thinks integrating both the radio and baseband functions on a monolithic CMOS silicon die is considered the so-called Holy Grail of integration.

What stops all this is that Moore’s law drives digital component design to smaller process geometries, this raises clear and present challenges for those that have integrated RF components with transceivers and basebands.

He said that because of that, chip designers need to come up with a different cunning plan.

Dr. Oleksandr Gorbachov, Rfaxis’s CTO, RFaxis uses a holistic and scalable approach for both standalone companion RfeIC chips.

It means that you do not need pre-distortion circuits and you can avoid break-down voltages and get linear amplification functionality.

He said that the 28nm Nano-RFeIC is designed for 2.4GHz and 5.0GHz frequency bands and supports simultaneous WLAN and Bluetooth operations.

The single chip/single die Nano-RFeIC has high efficiency linear power amplifiers that deliver EVM power for transmit operations, low-noise amplifiers for high receive sensitivity, switching circuitry, power detection, true directional decouplers, coexistence and harmonic filters, impedance matching and CMOS logic control circuitry.

Mike Neshat, chairman and CEO of RFaxis, claimed that the chip could usher in a new generation of ultra low power mobile devices such smartphones, tablet PCs, mobile internet devices.