Micron signs STT-MRAM research deal

Micron has announced a collaboration deal with a Singapore research institute to develop non volatile spintronics memory STT-MRAM.

The chip firm has agreed to team up with the A*STAR Data Storage Institute (DSI) to develop spin transfer torque magnetic random access memory (STT-MRAM), a promising next generation memory type.

While other non-volatile memory found in solid state drives such as NAND are continuing to be developed at ever smaller processes, researchers reckon STT-MRAM could hold many benefits.

For example it is claimed that STT-MRAM has distinct advantages over NAND flash, which has comparitively limited endurance and write power.

And Micron is not the only one to see potential in STT-MRAM.  Samsung recently completed a takeover of developments firm Grandis, with a view to incorporating it into its R&D into the nascent memory technology.

Part of Micron’s collaboration with DSI will see  the pair invest in a joint research project to develop “high density STT-MRAM devices” over the next three years as they push to commercialise the technology.