Sharp and Elpida are collaborating to develop a type of memory chip that will
write data 10,000 times faster than NAND flash.
That’s according to Japanese wire nikkei.com, which reports that the device – resistive random access memory (ReRAM) will come to market by 2013.
Other bodies including the University of Tokyo, equipment manufacturings, and the Japanese National Institute of Advanced Industrial Science and Technology are also joining to work on the venture, according to the wire.
The devices will be built using a 30 nanometre process technology and, it’s claimed, the devices will also offer low power consumption as well as being far cheaper to make than current NAND devices.
The report is here (subscription required).