Intel-Micron announce 3D XPoint SCM technology

What-is-3D-XPointIntel and Micron announced their jointly developed 3D XPoint technology at an analyst meeting today in Santa Clara, California.

Rob Crooke, Senior VP & GM of the Non-Volatile Memory (NVM) Solutions Group, Intel Corporation and Mark Durcan, CEO Micron Technology took the stage to present the jointly developed 3D XPoint memory technology. The 300 mm wafer shown in the presentation was produced at Micron’s Lehi, Utah fab. The new devices are debuting as 128Gb, 2 Layer, Byte Addressable devices that use “bulk material property change” process – availability is limited to what’s “in (joint) production facility today” though 2016 was stated by Durcan.

The 3D XPoint technology is 1,000 times faster than Flash, 1,000 times the duration of Flash and 10 times the density of DRAM.

The new technology has been widely circulating as “Persistent Memory” and “Storage Class Memory” until now and has been widely speculated upon. One interesting quote, “no other competitors have the technology” indicates that Intel-Micron has scooped their competition in the cloud access storage marketplace.


3D XPoint Innovations

Cross Point Array Structure
Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high density.

Stackable
The initial technology stores 128Gb per die across two stacked memory layers. Future generations of this technology can increase the number of memory layers and/or use traditional lithographic pitch scaling to increase die capacity.

Selector
Memory cells are accessed and written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity and reducing cost.

Fast Switching Cell
With a small cell size, fast switching selector, low-latency cross point array, and fast write algorithm, the cell is able to switch states faster than any existing nonvolatile memory technologies today.

Fast Switching Cell
With a small cell size, fast switching selector, low-latency cross point array, and fast write algorithm, the cell is able to switch states faster than any existing nonvolatile memory technologies today.

Byte Addressable Data
3D Xpoint technology allows data to be directly addressed at the byte level. Access to DRAM and 3D Xpoint memory uses the same addressing model greatly simplifying the CPU interface to data and enables Near Data Processing within an In-Memory Database system.

TechEye Take

This announcement was evidently rushed in order to beat the pre Flash Memory Summit press announcements next week – and they “blew the socks off the competition” according to one analyst source. Over 100 engineers have been involved in these well camouflaged developments which indicate the companies have spent in the billions of dollars on this program. Oh, and 3D Xpoint use Micron’s planar process indicating that the technology is near term to production. There is no mention made of TSV stacking but from all indications this technology will enter the market as stacked devices. From what we can ascertain this technology is in “rollout” – we expect production volumes ramping much sooner than might usually be expected. 

The “bulk material property change” provides no indication about process details. Connecting the memory elements with their bit-lines remains unclear – whether it’s a diode switching element or an Ovonic Switch remains to be revealed. In fact all the good questions remain unanswered – more fodder for later.